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Normas DIN – AENOR
DIN 51456:2012-10

DIN 51456:2012-10

Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS) / Note: Date of issue 2012-10-08

Essai de matériaux pour la technologie des semi-conducteurs - Analyse de surface de tranches de silicium par détermination multiéléments en solutions aqueuses en utilisant la spectrométrie de masse à plasma inductif (ICP-MS) / Attention: Date de parution 2012-10-08

Prüfung von Materialien für die Halbleitertechnologie - Oberflächenanalyse von Silicium-Halbleiterscheiben (Wafer) durch Multielementbestimmung in wässrigen Analysenlösungen mittels Massenspektrometrie mit induktiv gekoppeltem Plasma (ICP-MS) / Achtung: Erscheinungsdatum 2012-10-08

Fecha Anulación:
2013-10 /Withdrawn
Relación con otras normas DIN:

Reemplazada por: DIN 51456:2013-10

Resumen:
This document specifies a test method for surface analysis for the determination of mass fractions of the elements Al (aluminum), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper) , Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesium), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead) , Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) on silicon wafers using ICP-MS.
Keywords:
Chemical analysis and testing, Decomposition, Definitions, Determination procedures, Hydrogen fluoride, ICP, Inductively Coupled Plasma, Mass spectrometry, Materials testing, Methods of analysis, Plasma, Semiconductor slices, Semiconductor technology, Silicon, Silicon slices, Surface properties, Surfaces, Testing, Wafers
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