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Normas BSI – AENOR
BS IEC 62047-31:2019

BS IEC 62047-31:2019

Semiconductor devices. Micro-electromechanical devices. Four-point bending test method for interfacial adhesion energy of layered MEMS materials

Fecha:
2019-04-17 /Definitive
Comité:
EPL/47
Equivalencias internacionales:

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IEC 62047-31 Ed.1.0

Resumen:
IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).
Keywords:
CD-ROM, Data layout, Data transfer, Digital signals, Recording characteristics, Optical properties of materials, Coding (data conversion), Information exchange, Recording tracks, Data transmission, Error correction, Data processing, Environment (working), Read-only storage, Dimensions, Data media, Computer storage devices, Data recording, Optical disks, Storage, Testing conditions, Optical recording, Defects
154,54
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Formato digital

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