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Normas BSI – AENOR
BS IEC 60747-8:2000

BS IEC 60747-8:2000

Discrete semiconductor devices and integrated circuits. Field-effect transistors. Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

Fecha Anulación:
2011-06-30 /Withdrawn
Comité:
EPL/47
Equivalencias internacionales:

IEC 60747-8:2000

Relación con otras normas BSI:

Reemplaza a: BS 6493-1.8:1985

Reemplazada por: BS IEC 60747-8:2010

Resumen:
Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.
Keywords:
Field-effect transistors, Transistors, Electronic equipment and components, Electrical insulation, Junction transistors, Semiconductor devices, Integrated circuits
301,38
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