ASTM E1127-08

2015-06-17 /Historical

Auger electron spectroscopy yields information concerning the chemical and physical state of a solid surface in the near surface region. Nondestructive depth profiling is limited to this near surface region. Techniques for measuring the crater depths and film thicknesses are given in (1).

Ion sputtering is primarily used for depths of less than the order of 1 μm.

Angle lapping or mechanical cratering is primarily used for depths greater than the order of 1 μm.

The choice of depth profiling methods for investigating an interface depends on surface roughness, interface roughness, and film thickness (2).

The depth profile interface widths can be measured using a logistic function which is described in Practice E 1636.

1.1 This guide covers procedures used for depth profiling in Auger electron spectroscopy.

1.2 Guidelines are given for depth profiling by the following:

	Section
Ion Sputtering	6
Angle Lapping and Cross-Sectioning	7
Mechanical Cratering	8
Mesh Replica Method	9
Nondestructive Depth Profiling	10

1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

angle lapping; angle-resolved AES; Auger electron spectroscopy; ball cratering; compositional depth profiling; cross sectioning; depth profiling; depth resolution; sputter depth profiling; sputtering; thin films; Surface analysis--spectrochemical analysis; Angle lapping and staining technique; Argon atmospheres; Auger electron spectroscopy (AES); Ball cratering; Crater edge profiling; Depth profiling; Gases; Ion sputtering; Noble gas ions; Nondestructive evaluation (NDE); Polishing properties; Sputter depth profiling data; Xenon