Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.
1.2 This test method is intended as both a referee and production test through selection of an appropriate test position plan.
1.3 The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test.
Note 1—Test Method F 1366 is not based on infrared absorption measurement and it measures total oxygen content, not interstitial oxygen content. It is also a destructive technique. However, it can be used to determine the radial variation of the oxygen content if suitable modifications of the test procedure are made.
1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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