Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique
The use of GaAs for semiconductor devices requires a consistent atomic lattice structure. However, lattice or crystal line defects of various types and quantities are always present, and rarely homogeneously distributed. It is important to determine the mean value and the spatial distribution of the etch pit density.
1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measure the etch pit density and to judge the nature of crystal imperfections. To the extent possible, it follows the corresponding test method for silicon, Test Method F47. Test Method F47 also presents the definition of many crystallographic terms, applicable to this test method.
1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200000/cm2.
1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method. The front surface normal direction of the sample must be parallel to the <001> within + 5° and must be suitably prepared by polishing or etching, or both. Unremoved processing damage may lead to etch pits, obscuring the quality of the bulk crystal.
1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.
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