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Normas ASTM – AENOR
ASTM F1190-99

ASTM F1190-99

Standard Guide for Neutron Irradiation of Unbiased Electronic Components

Fecha:
2021-03-02 /Historical
Superseeded by:
Scope:

1.1 This practice applies to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components to neutron radiation from a nuclear reactor source. Only the conditions of exposure are addressed in this practice. The effects of radiation on the test sample should be determined using appropriate electrical test methods.

1.2 System and subsystem exposures and test methods are not included in this practice.

1.3 This practice is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The practical limits for neutron fluence ([phi]eq,1MeV,Si or [phi]eq,1MeV,GaAs) in semiconductor testing range from approximately 10 to 10 16 n/cm .

1.4 This practice addresses those issues and concerns pertaining to irradiations with neutrons of energies greater than 10 keV.

1.5 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords:
Destructive testing-semiconductors; Dosimetry; Electrical conductors-semiconductors; Equivalent monoenergetic neutron fluence; Exposure tests; Fast burst reactors (FBR); Gallium arsenide; Gamma radiation; Germanium-semiconductor applications; Irradiance/irradiation-semiconductors; MeV equivalent fluence; Neutron radiation; Nickel; Radiation exposure-electronic components/devices; Semiconductor wafer; Silicon-semiconductor applications; Sulfur; Thermal neutron radiation; Thermoluminescent detector (TLD); TRIGA-type reactors; neutron irradiation of unbiased electronic components, practice
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