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ASTM E1250-88(2000)

ASTM E1250-88(2000)

Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

2017-08-16 /Historical
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1.1 Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber.

1.2 This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 7 X 10 -6 to 3 X 10 -2 C kg -1 s -1 (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is >100 R/s, see Appendix X1.

Note 1-See Terminology E170 for definition of exposure and its units.

1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Cobalt-60 irradiators; Electrical conductors-semiconductors; Electronic hardness; Electronic materials/applications; Gamma radiation; Hardness tests-radiation (of semiconductors); Ionizing radiation; Irradiance/irradiation; Low-energy gamma radiation; Photon energy spectrum; Radiation exposure-nuclear materials/applications; Radiation-hardness testing; Silicon-semiconductor applications; ionization chambers to assess the low energy gamma component of; cobalt-60 irradiators used in radiation-hardness testing of silicon; electronic devices, method
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